MRAM Market: Overview and Future Trends
Magnetoresistive Random-Access Memory (MRAM) is a type of non-volatile random-access memory that uses magnetic storage elements for data storage. Unlike traditional DRAMs, MRAMs have a fast access time, high endurance, and low power consumption. They are commonly used in applications such as automotive electronics, industrial automation, and IoT devices. According to a report by MarketsandMarkets, the global MRAM market is expected to grow from $238.3 million in 2020 to $3.2 billion by 2026, at a CAGR of 46.3% during the forecast period.
Application of MRAM in Drive Systems
One of the major applications of MRAM is in drive systems, particularly in electric vehicles (EVs). MRAMs are used in the control and management of electric motors, which are the primary components of modern EVs. They offer several advantages over traditional memory technologies, such as higher reliability, faster access times, and lower power consumption. Additionally, MRAMs can operate at high temperatures, making them ideal for use in automotive applications.
Structure and Types of MRAM
The most commonly used type of MRAM is the spin-transfer torque (STT) MRAM, which uses a magnetic field to flip the orientation of magnetic moments in a thin-film magnetic stack. Other types of MRAM include the spin-orbit torque (SOT) MRAM, which uses an electric field to flip the magnetic moments, and the domain wall motion (DWM) MRAM, which uses domain wall propagation to store data.
MRAM Market by Product and Model
The global MRAM market can be segmented into standalone MRAMs, embedded MRAMs, and toggle MRAMs. Standalone MRAMs are chips that are used as standalone memory units, while embedded MRAMs are integrated into system-on-chip (SoC) devices. Toggle MRAMs are a type of STT MRAM that uses a toggle-switching mechanism for data storage.
The market can also be segmented by model into giant magnetoresistive (GMR) MRAM, magnetic tunnel junction (MTJ) MRAM, and others. GMR MRAMs are based on the GMR effect, which is a change in the resistance of a magnetic stack due to the rotation of magnetic moments. MTJ MRAMs are based on the tunnel magneto-resistance (TMR) effect, which is a change in the resistance of a magnetic tunnel junction due to the orientation of magnetic moments.
Regional Analysis of MRAM Market
The global MRAM market can be segmented into North America, Europe, Asia-Pacific, and Rest of the World (RoW). Asia-Pacific is expected to account for the largest share of the market, due to the presence of several prominent MRAM manufacturers in the region such as Everspin Technologies Inc. (US), NVE Corporation (US), and Toshiba Corporation (Japan). The increasing demand for MRAM in automotive, aerospace, and industrial applications is also driving the growth of the market in the region.
Beijing Soly Technology Co., Ltd. and MRAM
Beijing Soly Technology Co., Ltd. is affiliated with Shougang Group Mining Company, and has over 20 years of experience in the mining industry. The company also provides MRAM-based solutions for automotive, aerospace, and industrial applications. Their MRAM products use STT MRAM technology, and are available in standalone and embedded formats. Soly Technology's MRAMs offer high reliability, fast access times, and low power consumption, making them suitable for use in harsh environments.
Conclusion
MRAM is a rapidly growing market that offers several advantages over traditional memory technologies. The increasing demand for MRAM in automotive, aerospace, and industrial applications is driving the growth of the market. Beijing Soly Technology Co., Ltd. is one of the prominent companies in the MRAM market, providing reliable and high-performance MRAM solutions for various applications. The future of MRAM looks bright, with the potential to replace traditional memory technologies in a wide range of applications.